What do I need to do in order to accurately analyze the thermal model of an SSI device?
Because the silicon interposer is tightly coupled to the active SLRs, the thermal behavior of an SSI device is very similar to that of a monolithic (single die) device.
This has been verified in both device-level thermal simulation and device characterization.
As a result, it is not necessary to model the different power or thermal characteristics of the individual SLRs, and there is no difference in how you model or measure these devices from a non-SSI device.
The thermal models consider only a single junction node and in terms of measurement, a single SYSMON measurement is all that is necessary to understand die temperature.