RT Kintex UltraScale FPGA
For Ultra High Throughput and
High Bandwidth Applications

Product Advantages

Radiation Tolerant Kintex UltraScale Product Overview

XQR Kintex® UltraScale FPGAs are high-performance monolithic FPGAs with a focus on performance. High DSP and block RAM-to-logic ratios and next-generation transceivers combined with space-grade packaging to handle vibration and handling requirements for launch and operation enable a new generation of high-density FPGAs for on-orbit reconfiguration targeted for applications like on-board processing, digital payloads, remote sensing, and many more.


Key advantages of RT Kintex UltraScale:

  • True Unlimited On-Orbit Reconfigurable Solution
  • >10X DSP Compute increase for Processing Intensive Algorithms & Analytics
  • Full Radiation Tolerance across All Orbits
  • Machine Learning Ecosystem enables High Performance Edge Inference in Space
  • Vivado & Vitis Support
  • Prototyping available NOW!
rt-kintex-ultrascale
Product Table

Product Table

  Virtex – 4QV
(90nm) XQRV4QV
Virtex - 5QV
(65nm) XQRV5QV
RT Kintex UltraScale
(20nm) XQRKU060
Radiation Hardness Tolerant Hard Tolerant
Memory (Mb) 4.1 to 9.9 12.3 38
System Logic Cells (k) 55 to 200 131 726
CLB Flip-Flops (k) 49.1 to 178.1 81.9 663
CLB LUTs (k) 49.1 to 178.1 81.9 331
MGTs None 18 at 4.25Gbps 32 at 12.5 Gbps
User I/O 640 to 960 836 620
DSP Slices 32 to 192 320 2,760
Radiation (TID, SEL) 300, >125 1,000, >125 100, >80
Reliability (Package, Test) CNA1509; V-Flow CNA 1752; B-Flow & V-Flow CNA 1509; B-Flow & Y-Flow
Documentation

Documentation

Default Default Title Document Type Date
Radiation

RT Kintex UltraScale Radiation Characteristics

The space-grade XQR UltraScale™ architecture-based devices extend the benefit of commercial silicon with unique ceramic column grid array package, tested to stringent qualification flows like Xilinx® B, Y test flows (QML compliant), full military operating temperature range support, and radiation tested for single-event effects. RT Kintex UltraScale device uses more than 40 proprietary, patented circuit design and layout techniques to reduce the SEU cross-section. The table below lists radiation characteristics for RT Kintex UltraScale.

Symbol Description Min Typ Max Units
TID Total Ionized Dose (GEO) - 100 120 Krad (Si)
SEL Single-Event-Latch-Up Immunity - 80 - MeV-cm2/mg
SEUCRAM Single-Event Upset in Configuration RAM (GEO) - 1.0e-8 - Upset/bit/day
SEUBRAM Single-Event Upset in Block RAM (GEO) - 8.5e-9 - Upset/bit/day
SEFICRAM Single Event Functional Interrupt Orbital Upset Frequency – Configuration RAM (GEO) - 4.5e-4 - Upset/device/day

The following table describes the types of Single Event Effects. For detailed reports visit the Space Lounge.

Radiation Type Radiation Signature Target/Comments
Single Event Upset (SEU) Corruption of the information stored in a memory element Memories, latches in logic devices. Composed of single bit upsets (SBU) or multiple bit upset (MBU).
Single Event Transient (SET) Impulse response of certain amplitude and duration Analog and mixed-signal circuits. Can lead to SEU if latched in memory cell.
Single Event Latchup (SEL) High-current conditions CMOS devices. Might lead to hard failure.
Single Event Functional Interrupt (SEFI) Corruption of a datapath leading to loss of normal operation Complex devices with built-in state machine/control sections or systems.